SiC / SiC microwave welding
R.Silberglitt other single-mode and multimode microwave cavity diameter welded 0.952cm, high 0.635cm of two SiC wafer, microwave soldering temperature 1450 `C, 5min a time 10min, microwave power 250W. The methods used are summarized as follows :
        2 of Si powder, SiC wafer as the adhesive , the two microwave welding interface between the SiC layer having a thickness of 50um.
 The Si powder and oil mixture to form a slurry coating on the SiC wafer , then microwave welding , weld interface thickness is 10um.
 Si layer by plasma spraying technique in which a SiC wafer , SiC wafer and the other one placed on the Si layer is sprayed on the SiC wafer , microwave welding , after welding the thickness of the interface layer is not more than 5um.
 Dodecene as the binder with 20 , a certain percentage of Si, C and Ti powder into a cold high of about lmm of the wafer, the wafer into the SiC wafer 2 , and use the microwave welding, found the interface layer appeared Tic, TiO2, Ti3O5 and SiC and other substances.
 Several methods described above , the welded joint Knoop hardness values ​​without major changes .